JJM – JMSH1001PTLQ: A high-power MOSFET series integrated with advanced ShieldedGate Trench (SGT) technology
JJM introduces the new generation JMSH1001PTLQ MOSFET, integrated with SGT technology, designed for use in modern automotive applications

JMSH1001PTLQ is a high-load MOSFET series, advanced Shielded Gate Trench (SGT) technology, providing outstanding performance with ultra-low conduction resistance, high current capacity up to 367A and extremely fast switching speed. This is the ideal choice for power systems, motors, inverters and automotive applications that require absolute reliability. In particular, with AEC-Q101 standard and compact PowerJE® packaging, the product is not only powerful but also optimized for modern design. JMSH1001PTLQ – when power, durability and performance converge in a single component.
Highlight product:
- High power, large current
Capable of continuous current up to 367A at TC = 25°C and up to 232A at TC = 100°C, strongly meeting the high power needs in power systems, motors, inverters and high inductive loads
- Ultra-low RDS(on) – optimizes switching efficiency
With a typical RDS(on) of only 1.1mΩ (at VGS = 10V), it helps reduce power loss, increase overall efficiency and reduce heat emission Low gate charge – ultra-fast response Low gate charge enables fast switching, optimized on/off time, suitable for high frequency PWM applications and effective noise reduction.
- High surge tolerance & durability 100% UIS (Unclamped Inductive Switching) tested with avalanche energy up to 1838mJ, ensuring safe operation under overvoltage or inductive overload conditions.
- PowerJE®10×12 packaging – high-end solution
Compact design, good heat dissipation, suitable for both SMT design and manual soldering base design.
- Automotive – AEC Q101 standard
The product meets AEC Q101 automotive quality standards, suitable for use in harsh car environments: ADAS, OBC, BMS, inverter for EV/HEV…
Applications
- DC-DC converters & load MOSFETs: High efficiency, large current response, fast switching time to significantly reduce losses.
- BLDC motors/pump motors: high load capacity, durable in harsh conditions.
- Inverters for chargers, inverters: good response to 100V voltage threshold, high current, and good pulse resistance.
- Modern automotive equipment: from electric vehicle infrastructure, BMS system to motor control circuit, all require high-performance, reliable MOSFETs.
Specifications:
- Structure: N-channel MOSFET (SGT)
- Withstanding voltage( Vds): 100V
- Continuous current (Id): 367 A @ 25°C / 232 A @ 100°C
- Maximum gate-to-source voltage (Vgs): ±20V
- Conductor resistance Rds(on): 1.1 mΩ
- Switching speed (td(on)/tr/td(off)/tf): ~13ns / 25ns / 49ns / 16ns
- Operating temperature: -55 to +175 °C
- Package: PowerJE® 10×12 (DFN style)
Learn more: JMSH1001PTLQ
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