JJM - JMH65R040PSFD: High Power N-channel Transistor

The MOSFET JMH65R040PSFD is designed to operate efficiently in applications requiring high voltage and large current. With a drain-source voltage (VDS) rating of up to 650V, it is well-suited for high-voltage power supply applications such as PFC, LLC, flyback, and industrial power converters. The product ensures safety and excellent isolation, even in environments with fluctuating voltage.

With a continuous drain current of up to 53A, the product can handle heavy-load systems, from server power supplies and EV chargers to power amplifiers, telecommunications, and more.

Specifications: 

– Drain-to-Source Voltage (VDS): 650V 

– Continuous Drain Current (ID): 53A at 25°C, 33A at 100°C 

– Drain-Source Resistance (RDS(ON)): 34mΩ at VGS = 10V 

– Gate-to-Source Voltage (VGS): ±30V 

– Power Dissipation (PD): 278W at 25°C, 111W at 100°C 

– Operating Temperature: -55°C to 150°C 

Advantages: 

– High Withstand Voltage 

– Strong Load Current 

– Low Power Loss 

– Excellent Durability 

– Fast Switching Time 

Applications: 

– Switching Power Supply (SMPS) 

– PFC, LLC and Flyback converter 

– Fast Charging System, Telecom Power Supply 

– TVs, computers, high-end consumer appliances 

Learn more: JMH65R040PSFD

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