TPH3R10AQM, 100V N-Channel Power MOSFET

Toshiba has just launched the 100V N-Channel Power MOSFET that supports miniaturization of power supply circuits, TPH3R10AQM.

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The product has 16% lower drain-source On-resistance and expands the safe operating area by 76% compared to the old version, TPH3R70APL. Furthermore, with a gate threshold voltage range of 2.5V to 3.5V, the TPH3R10AQM reduces the possibility of malfunction due to gate voltage noise.

With the above advantages, TPH3R10AQM is a suitable product for applications that need to reduce the size of the power supply circuit such as communication equipment (data center, base station), Power converter (DC/DC converter,…). 


  • Low drain-source On-resistance only: RDS(ON) = 3.1mΩ (max) (VGS=10V) 
  • Wide range of safe operation 
  • High channel temperature rating: Tch (max)=175°C  


  • Dimensions: 4.9×6.1×1.0 (mm) 
  • Number of pins: 8 
  • Rating Index 

Drain-Source voltage VDSS = 100 (V) 

Gate-Source voltage VGSS = +/- 20 (V) 

Current: ID=120 (A) 

  • On-Resistance 

RDS(ON)= 3.1 mΩ (max) (VGS=10 V) 

RDS(ON)= 6 mΩ (max) (VGS=6 V) 


  • Power supplies for communications equipment such as for data centers and communications base stations  
  • Switching power supplies (High-efficiency, DC-DC converters,…) 

Learn more: TPH3R10AQM

Contact EPI Vietnam Technologies – the authorized distributor of TOSHIBA in Vietnam for technical support and samples.