SSM14N956L, Toshiba Launches Small and Thin Common-Drain MOSFET

Toshiba has launched SSM14N956L a 12V common-drain N-channel MOSFET with a current rating of 20A, for use in battery protection circuits in lithium-ion (Li-ion) battery packs, such as those for mobile devices.  

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Li-ion battery packs rely on highly robust protection circuits to reduce heat generation while charging and discharging and to enhance safety. These circuits must feature low power consumption and high-density packaging, requiring MOSFETs that are small and thin and that deliver low On-resistance. 

SSM14N956L uses Toshiba’s micro-process ensures both low power loss, low On-resistance characteristics, and low standby power, realized by low gate-source leakage current characteristics. These qualities help to extend battery operating hours. The new product also uses a new small, thin package, TCSPED-302701 (2.74mm × 3.0mm, t = 0.085mm (typ.)). 


  • Industry leading low On-resistance: RSS(ON)=1.1mΩ (typ.) @VGS=3.8V 
  • Industry leading low gate-source leakage current: IGSS=±1μA (max) @VGS=±8V 
  • Small and thin type TCSPED-302701 package: 2.74mm × 3.0mm, t=0.085mm (typ.) 
  • Common-drain structure that can be easily used in battery protection circuits  


  • Dimensions: 2.74mm × 3.0mm, t=0.085mm (typ.) 
  • Rating voltage: Vsss=12 (V), Vgss=[Phương trình]8(V) 
  • Gate-source leakage current: IGSS=±1μA (max) @VGS=±8V 


  • Consumer electronics and office and personal devices with a lithium-ion battery pack, including smartphones, tablets, power banks, wearable devices, game consoles, electric toothbrushes, compact digital cameras, digital SLR cameras, etc. 

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