TPH3R10AQM, 100V N-Channel Power MOSFET

Toshiba has just launched the 100V N-Channel Power MOSFET that supports miniaturization of power supply circuits, TPH3R10AQM.

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The product has 16% lower drain-source On-resistance and expands the safe operating area by 76% compared to the old version, TPH3R70APL. Furthermore, with a gate threshold voltage range of 2.5V to 3.5V, the TPH3R10AQM reduces the possibility of malfunction due to gate voltage noise.

With the above advantages, TPH3R10AQM is a suitable product for applications that need to reduce the size of the power supply circuit such as communication equipment (data center, base station), Power converter (DC/DC converter,…).

Benefits:

Low drain-source On-resistance only: RDS(ON) = 3.1mΩ (max) (VGS=10V)
Wide range of safe operation
High channel temperature rating: Tch (max)=175°C

Features:

Dimensions: 4.9×6.1×1.0 (mm)
Number of pins: 8
Rating Index

Drain-Source voltage VDSS = 100 (V)

Gate-Source voltage VGSS = +/- 20 (V)

Current: ID=120 (A)

On-Resistance

RDS(ON)= 3.1 mΩ (max) (VGS=10 V)

RDS(ON)= 6 mΩ (max) (VGS=6 V)

Applications:

Power supplies for communications equipment such as for data centers and communications base stations
Switching power supplies (High-efficiency, DC-DC converters,…)