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Toshiba - TRS20H120H: Third generation Schottky Barrier Silicon Carbide (SiC) Diode
TRS20H120H product, Schottky Barrier Silicon Carbide (SiC) semiconductor diode provides improved performance and reliability in industrial applications.
With Silicon Carbide (SiC) technology, the diode is capable of operating at high voltages up to 1200V, and large currents of 20A, helping to improve overall system performance. TRS20H120H has a low forward voltage (Vf) of only 1.27V and a maximum of 1.45V combined with a reverse current (Ir) of 130uA at a reverse voltage of 1200V, reducing power loss during operation.
In addition, the product has almost zero reverse recovery time, the diode has the ability to save electricity when switching and improve conversion efficiency, and operates at high temperatures up to 175°C to help increase durability and device’s lifespan.
TRS20H120H is the ideal choice for applications such as power factor rectifiers (PFC), solar inverters, UPS power, DC-DC power converters, etc.
Specifications:
– Maximum forward current (If): 20A
– Reverse voltage (V_rrm): 1200V
– Forward voltage (Vf): 1.27V(nominal), 1.45V (maximum)
– Reverse current (Ir): 130μA
– Maximum operating temperature: 175 °C
– Reverse recovery time (T_rr): almost 0
Advantages:
– High performance
– Low power loss
– Good heat resistance
– Short reverse recovery time
– Low reverse current
Applications:
– Power factor correction (PFC)
– Solar inverter
– UPS power source
– DC-DC power converter, …
Learn more: TRS20H120H
Contact EPI Vietnam Technologies – the authorized distributor of Toshiba in Vietnam for better support on products and prices.
