Toshiba - TK4R9E15Q5: High-power MOSFET using U-MOSⅩ-H process

TK4R9E15Q with low Rds(on) resistance, only 4.9mΩ at 10V, helps minimize power loss and increase operating efficiency. The device uses a high-speed diode (HSD) to improve reverse recovery characteristics, which are extremely important for synchronous rectifier applications, by providing approximately 47% less reverse recovery charge and approximately 44% faster reverse recovery time. Designed for synchronous rectification applications, the TK4R9E15Q reduces switching power loss and improves performance. The mosfet line operates stably at temperatures up to 175°C, with a power dissipation of 300W, meeting high power requirements. TK4R9E15Q5 is suitable for applications such as switching power supplies (SMPS), Renewable energy systems, High power electronics, Automotive, etc.

Specifications: 

– Power drain voltage (Vdss): 150V 

– Continuous current (Id): 120A at 25°C 

– Resistance Rds(on): 4.9mΩ at 10V 

– Power dissipation (Pd): 300W 

– Maximum operating temperature (Tch): 175°C 

– Source gate voltage (Vgss): ±20V 

– Impulse current (Idp): 480A (t = 100 μs) 

– Reverse recovery time (trr): 50 ns (typ.) 

– Reverse recovery charge (Qrr): 50 nC (typ.) 

– Gate charge (Qsw): 26 nC (typ.) 

– Source leakage current (Idss): 10 μA (max) (Vds = 150V) 

– Gate threshold voltage (Vth): 3.1V to 4.5V (Vds = 10V, Id = 2.2mA) 

Advantages: 

– High capacity 

– Optimal design 

– Fast response and recovery time 

– Less power loss 

Applications:  

– Switching mode power supplies (SMPS) 

– Renewable energy systems 

– High power electronics, Automotive,… 

Learn more: TK4R9E15Q

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