Toshiba high performance and small size SiC MOSFET for industrial equipment

The two products have rated currents of 3300 V and 800 A respectively. The new product uses 3rd generation silicon carbide (SiC) and SBD (Schottky Barrier Diode) MOSFET chips. This helps reduce conduction losses with Switching loss when turned on is only 230 mJ and switching loss when turned off is only 230 mJ. With all the above advantages, MG800FXF1ZMS3 and MG800FZF1JMS3 bring optimization in performance and reduced size for the entire system, suitable for applications in industrial equipment, motor control equipment, generation systems. renewable energy electricity, and inverters and converters for rail vehicles. 

Benefits: 

• Low drain-source on-voltage (sense): 

VDS(on)sense=1.3 V (typ.) (ID=800 A, VGS=+20 V, Tch=25 °C) 

• Low turn-on switching loss: 

Eon=230 mJ (typ.) (VDD=1800 V, ID=800 A, Tch=175 °C) 

• Low turn-off switching loss: 

Eoff=230 mJ (typ.) (VDD=1800 V, ID=800 A, Tch=175 °C) 

Features: 

• Dimensions: 122.5 x 100 x 40 mm 
• Channel temperature Tch: 175 (°C) 
• Discharge current (DC) ID: 800 (A) 
• VDSS Drain-source terminal voltage: 3300 (V) 
• Gate-source voltage VGSS: 25 (V) 

Application: 

• Industrial equipment 
• Inverters and converters for railway vehicles 
• Renewable energy power generation systems 
• Motor control equipment for industrial equipment, etc. 

Contact EPI Vietnam Technologies – the authorized distributor of TOSHIBA in Vietnam for technical support and samples. 

#Toshiba 

#industrial_equipment 

#Renewable_energy 

#inverters 

#motor_control