SSM14N956L, Toshiba Launches Small and Thin Common-Drain MOSFET

Li-ion battery packs rely on highly robust protection circuits to reduce heat generation while charging and discharging and to enhance safety. These circuits must feature low power consumption and high-density packaging, requiring MOSFETs that are small and thin and that deliver low On-resistance. 

SSM14N956L uses Toshiba’s micro-process ensures both low power loss, low On-resistance characteristics, and low standby power, realized by low gate-source leakage current characteristics. These qualities help to extend battery operating hours. The new product also uses a new small, thin package, TCSPED-302701 (2.74mm × 3.0mm, t = 0.085mm (typ.)). 

Benefits:  

• Industry leading low On-resistance: RSS(ON)=1.1mΩ (typ.) @VGS=3.8V 
• Industry leading low gate-source leakage current: IGSS=±1μA (max) @VGS=±8V 
• Small and thin type TCSPED-302701 package: 2.74mm × 3.0mm, t=0.085mm (typ.) 
• Common-drain structure that can be easily used in battery protection circuits  

Features:  

• Dimensions: 2.74mm × 3.0mm, t=0.085mm (typ.) 
• Rating voltage: Vsss=12 (V), Vgss=[Phương trình]8(V) 
• Gate-source leakage current: IGSS=±1μA (max) @VGS=±8V 

Application: 

• Consumer electronics and office and personal devices with a lithium-ion battery pack, including smartphones, tablets, power banks, wearable devices, game consoles, electric toothbrushes, compact digital cameras, digital SLR cameras, etc. 

Learn more: https://toshiba.semicon-storage.com/ap-en/company/news/news-topics/2023/05/mosfet-20230518-1.html 

Contact EPI Vietnam Technologies – the authorized distributor of TOSHIBA in Vietnam for technical support and better prices. 

#TOSHIBA 

#mosfet 

#lithium-ionbattery 

#consumerelectronic 

#office