Toshiba - TK024N60Z1: A new power MOSFET for high-efficiency systems

Toshiba, a leading brand in semiconductor technology, has officially launched its new N-channel MOSFET TK024N60Z1, featuring advanced DTMOSⅥ technology and superior performance.

The demand for low on-resistance products has increased to enhance the efficiency of power supply circuits. The new TK024N60Z1 MOSFET was developed to meet this need, achieving a maximum drain-source on-resistance of 0.024Ω, the lowest R_DS(on)[1] among Toshiba’s 600V DTMOSⅥ lineup. This significantly reduces conduction loss, thereby improving power supply efficiency and lowering heat generation during operation.

Additionally, by optimizing the gate structure and process design, the 600V DTMOSⅥ series has reduced the drain-source on-resistance per unit area by approximately 13%, contributing to better overall MOSFET performance.

Toshiba also provides design support tools for switching power supplies. Along with the G0 SPICE models for fast functional verification, G2 SPICE models with high accuracy that precisely replicate device characteristics are now available to support more reliable circuit design.

Specifications: 

– Drain-Source Voltage (Vdss): 600 V 

– Gate-Source Voltage (Vgss): ±30 V 

– Continuous Drain Current (ID): 80 A 

– Maximum Power Dissipation (Pd): 506 W 

– Maximum Conductor Resistance (RDS(ON)): 0.024 Ω at Vgs = 10 V 

– Package Type: TO-247 

Advantages: 

– High Conductor Efficiency – Low RDS(ON) 

– Fast Switching & Low Loss 

– Optimized for System Performance 

– Good Heat Dissipation – TO-247 Package 

– High Reliability, Long Life 

Applications: 

– Switching Power Supplies (SMPS) 

– Power Factor Correction (PFC) 

– LLC Converters for Servers and Data Centers 

– Solar and Energy Storage Systems 

Learn more: TK024N60Z1

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