Toshiba – TLP5795H: Photocoupler for MOSFET/IGBT Gate Drive, Optimized for Industrial Applications
TLP5795H – A high-efficiency MOSFET/IGBT gate drive photocoupler from Toshiba, featuring integrated UVLO function and ±5A drive current for renewable energy systems.

In the green energy market and factory automation, the demand for high-efficiency gate drivers for high-side and low-side power control in power systems is increasing. As such, advanced control technologies are being optimized. Toshiba’s TLP5755H product is one of the high-efficiency gate driver ICs, suitable for driving medium-to-high current MOSFETs and IGBTs in applications such as solar inverters and power conversion systems using low-to-medium voltage (approx. 15–30V) and current ratings (approx. ±3.4–±5.3A).
Additionally, the TLP5755H has a high output current of ±4.5–5.3A for driving power transistors at low voltage levels. The undervoltage lockout (UVLO) feature has a threshold voltage of 13.5V (max), detection voltage UVLO (VUVLO) at 11.1V (min), and reset voltage UVLO (VUVLO) at 11.0V (typ). This product is suitable for driving electric devices operating in the 15V to 20V range, often found in industrial automation systems.
The TLP5755H features rail-to-rail output that allows direct control of gate drive circuits down to -10V, ensuring full switching even under low input voltage conditions.
Using Toshiba’s high-speed infrared LED and optimized IC, the system achieves fast switching (optical transmission). Toshiba’s product line offers superior thermal resistance and wide operating temperature range (-40°C to +125°C), high insulation voltage of up to 5000Vrms, suitable for use in high-efficiency and high-isolation industrial equipment operating in harsh thermal environments.
Technical Specifications:
- High-speed infrared LED + photodetector structure, integrated in SO6L package
- 6-pin housing
- Operating ambient temperature: -40°C to +125°C
- Isolation voltage: 5000Vrms
- High dv/dt noise immunity: ≥35kV/μs
- Supply voltage range VCC: 15–30V
- Output drive current (peak): ±5.3A / –4.5A
Advantages:
- High drive current of ±5.3A / –4.5A enables direct driving of IGBTs and SiC MOSFETs in power systems without additional drivers
- Built-in undervoltage lockout function for enhanced safety
- Fast switching
- Excellent noise immunity (high CMTI)
Applications:
- Solar power inverters
- Uninterruptible power supplies (UPS)
- Electric vehicle (EV) charging stations
- Inverter drives
- IH cooking heaters
- Air conditioners
Learn more: TLP5795H
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