Polyfet – LQ801: A High-Performance RF Transistor with 55% Current Efficiency from a Trusted RF Semiconductor Brand

In the ever-evolving world of RF technology, choosing a powerful, stable, and reliable transistor is key to ensuring optimal system performance. Understanding this need, Polyfet introduces the LQ801, an LDMOS transistor line designed specifically for high-power RF applications.

Operating in the 1 MHz to 1000 MHz frequency range, it is ideal for radio systems, mobile base stations, MRI machines, and broadcasting equipment. With an output power of up to 30W (44 dBm), the LQ801 ensures strong and stable signal transmission.

Additionally, the transistor offers a 12 dB gain and an efficiency of 55%, helping reduce power consumption and extend device lifespan. It features low feedback capacitance and a thermal resistance of only 1.8 °C/W, enabling effective heat dissipation and stable operation even in harsh environments — withstanding temperatures up to 200 °C.

Specifications: 

– Output power (Pout): 30 Watts @ 28V 

– Conversion efficiency (Efficiency): 55% 

– Gain: 12 dB 

– Operating voltage: 28V 

– Operating frequency range: from 1 MHz to 1000 MHz 

– TO-61 design 

Advantages: 

– High efficiency 

– Strong output power 

– Wide frequency range 

– Good gain 

– Optimized design for heat dissipation 

Applications: 

– RF power amplifiers 

– Radio communication systems 

– Medical equipment (MRI, RF heating) 

– Military and aviation communications 

– Paging, radar, and broadcasting systems 

Learn more: LQ801

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