GeneSiC – G3F25MT06J: High-Performance SiC MOSFET with Superior Reliability

G3F25MT06J is a Silicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistor (SiC MOSFET) with a voltage rating of up to 650V and an on-resistance of just 20.5 mΩ. It delivers outstanding efficiency, minimizing energy loss and enhancing system performance. Designed to reduce switching spikes and losses, it enables faster and more efficient switching, which is crucial for applications requiring high speed and precision.

Additionally, G3F25MT06J is 100% tested for ruggedness and meets the AEC-Q101 standard, ensuring high durability and reliability in all operating conditions. Its optimized electromagnetic design and robust body diode with low voltage drop and fast recovery contribute to stable and long-lasting performance.

G3F25MT06J is an ideal choice for applications such as EV fast charging systems, energy storage solutions, and power supplies for servers and telecommunications.

Specifications: 

– Withstanding voltage (Vds): 650V 

– Conductor resistance (Rds(on)): 20.5 mΩ 

– Continuous current (Id): 77A 

– Gate-to-threshold voltage (Vgs(th)): 2.5V 

– Input capacitance (Ciss): 2200 pF 

– Output capacitance (Coss): 150 pF 

– Reverse transfer capacitance (Crss): 50 pF 

– Operating temperature (Tj): -55°C to 175°C 

Advantages: 

– Outstanding performance 

– Fast switching 

– High durability and reliability 

– Reduced temperature when connected in parallel 

Applications: 

– Fast charging systems for electric vehicles

– Energy storage systems, and power supplies for servers

– Telecommunications, motor control, etc. 

Learn more: G3F25MT06J

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