Toshiba – TK068N65Z5: Power MOSFET (N-channel) of the DTMOS VI series

The TK068N65Z5 with high-speed diode (DTMOSVI (HSD)) features a super junction structure, making it ideal for high-efficiency switching power supplies in data centers and power conditioners for photovoltaic generators.

This new product, utilizing the DTMOSVI (HSD) process, incorporates high-speed diodes to enhance reverse recovery characteristics, crucial for bridge circuits and inverter applications. Compared to Toshiba’s standard DTMOSVI series, the TK068N65Z5 achieves an approximate 65% reduction in reverse recovery time and an 88% reduction in reverse recovery charge.

Additionally, the DTMOSVI (HSD) process enhances reverse recovery characteristics over Toshiba’s previous DTMOSIV series with high-speed diodes (DTMOSIV (HSD)) and features lower drain cutoff current at high temperatures. These advancements reduce power loss, improve overall efficiency, and make it an excellent choice for EV charging stations, power conditioners for photovoltaic generators, switching power supplies, and uninterruptible power systems (UPS).

Specifications: 

– Withstand voltage (VDSS): 650V 

– Channel resistance (RDS(on)): 0.068 Ω @ 10V 

– Maximum current (ID): 1.69A 

– Fast reverse recovery time (trr): 135 ns (typ.) 

– Boost mode (Vth): 3.5 to 4.5 V (VDS = 10 V, ID = 1.69 mA) 

Advantages: 

– High efficiency 

– High voltage withstand capability 

– Fast reverse recovery time 

– High speed switching time 

Applications: 

– EV charging station, Power conditioner for PV generator

– Switching power supply

– Uninterruptible power system,… 

Learn more: TK068N65Z5

Contact EPI Vietnam Technologies – the authorized distributor of Toshiba in Vietnam for better support on products and prices.