TOSHIBA LINEUP EXPANSION OF SMALL, LOW ON-RESISTANCE COMMON-DRAIN MOSFET PRODUCTS HELPING BATTERY-DRIVEN DEVICES OPERATE FOR LONGER PERIODS OF TIME: SSM10N954L

Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched “SSM10N954L,” a common-drain 12 V N-channel MOSFET for battery protection circuits used for Lithium-ion (Li-ion) battery packs of mobile devices and other equipment to expand the lineup.

LINEUP EXPANSION OF SMALL, LOW ON-RESISTANCE COMMON-DRAIN MOSFET PRODUCTS HELPING BATTERY-DRIVEN DEVICES OPERATE FOR LONGER PERIODS OF TIME: SSM10N954L

Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched “SSM10N954L,” a common-drain 12 V N-channel MOSFET for battery protection circuits used for Lithium-ion (Li-ion) battery packs of mobile devices and other equipment to expand the lineup.

Li-ion battery packs use highly robust protection circuits to enhance safety. And it is also demanded to reduce heat generation during charging/discharging Li-ion battery. Such protection circuits require low power loss and high-density mounting, therefore, small and thin MOSFETs with low On-resistance are needed.

The new product uses its micro process and has further reduced its On-resistance. This allows the product to offer low power loss because of its industry-leading low On-resistance characteristics. And by also featuring low standby power consumption because of its low leakage current from the gate (low gate-source leakage current), it helps batteries to operate for longer time. In addition, it uses the new package TCSPAC-153001 (1.49 mm x 2.98 mm, t: 0.11 mm (typ.)).

Applications:

• Devices with a Li-ion battery pack

• Office and personal devices (Smartphones, tablets, power banks and wearable devices, etc.)

• Consumer electronics devices (Game consoles, electric toothbrushes, compact digital cameras and digital single-lens reflex cameras, etc.)

Features:

• Industry-leading low On-resistance: RSS(ON)=2.2 mΩ (typ.) @VGS=3.8 V

• Industry-leading low gate-source leakage current: IGSS=±1 µA (max) @VGS=±8 V

• Small size surface mounting TCSPAC-153001 package: 1.49 mm × 2.98 mm, t: 0.11 mm (typ.)

• Common-drain structure that can be easily used in battery protection circuits

Learn more: http://bit.ly/Toshiba_Mosfet_SSM10N954L

Contact for technical, samples and purchasing support:

• E: info@epi-tech.com.vn

• P: +84 2462 817448

• W: www.epi-tech.com.vn

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